InGaAsP/InP ridge waveguide （RWG） lasers at 1.3μm have been successful ly developed using five-layer structure crystal material made by one step LPE technology and the self-alignment process. By the upside of active area mounting method

the smallest threshold.current of lasers（CM）is 23mA at 25℃ ambient and shows good uniformity on this parameter;the highest opto-electric tramsfer efficiency from single facet is 0.18mW/mA;the highest output power at 65℃ambient temperature is more tham 10mW;the coupled power into the standard single mode fiber is more than 1.5mW at threshold current plus 20 mA and 25℃ambient temperature.