Reliability of 1. 3μm InGaAsP/InP RWG Laser Diodes

Wu Zhengyin et. al

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Reliability of 1. 3μm InGaAsP/InP RWG Laser Diodes

- Reliability of 1. 3μm InGaAsP/InP RWG Laser Diodes
- Study on Optical communication Issue 4, (1994)
- 作者机构：
  
  武汉电信器件公司
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Published：1994，
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[1]吴振英,吴桐,胡常炎,刘自力,李蓉萍,王淑琴,赵俊英.1．3μm　InGaAsP／InP　RWG型激光器的可靠性[J].光通信研究,1994(04):47-49+64.

Wu Zhengyin et. al. Reliability of 1. 3μm InGaAsP/InP RWG Laser Diodes. [J]. (4).(1994)
[1]吴振英,吴桐,胡常炎,刘自力,李蓉萍,王淑琴,赵俊英.1．3μm　InGaAsP／InP　RWG型激光器的可靠性[J].光通信研究,1994(04):47-49+64. DOI：

Wu Zhengyin et. al. Reliability of 1. 3μm InGaAsP/InP RWG Laser Diodes. [J]. (4).(1994) DOI：

摘要

通过对１．３μｍＩｎＧａＡｓＰ／ＩｎＰＲＷＧ型激光器的加速老化寿命试验，证明了此种结构激光器的可靠性，它在环境温度为５０℃、１００ｍＡＣＷ及环境温度为８０℃、１００ｍＡＣＷ的条件下加速老化，经过３２２０ｈ的实际测试共计１９３２００器件小时，在测试过程中没有一支器件失效。在这样的条件下其５０℃下的外推寿命ＭＴＴＦ为２０万ｈ，其统计标准偏差为σ＝１．０１６；８０℃下的外推寿命ＭＴＴＦ为３．８万ｈ，其统计标准偏差为σ＝０．８０４，从而推算出该结构激光器的退化激活能Ｅａ＝０．５４３ｅＶ，其２５℃下的寿命ＭＴＴＦ为１０３万ｈ。

Abstract

Having been tested through speeding aging lifetest

it is proved that 1. 3μmInGaAsP/InP RWG structure laser diode has much higher reliability than BH structrue LD’s. It is tested under the conditions of ambient temperature of 50℃. 100mA CW and ambient temperature of 80℃、100mA CW.3 220 hours and almost 193 200 device hours are tested

no one is failed during the test period. Under such high strict conditions

its 50℃ extrapolated lifetime （MTTF） is 2×105 hours

and its statistics standard deviation σ= 1. 016; its 80℃ extrapolated lifetime （MTTF）is 3.8×104 hours

and its statistics standard deviation σ=0.804. From these two results we can get its failure activated energy Ea =0. 543 eV.Its predicted 25℃;C lifetime （MTTF）is 1.03×106 hours.

关键词

半导体激光器可靠性

Keywords

sepeiconductor lasersreliability

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