The Test and Investigation in the Photovoltage Spectroscopy Spectra on Multilayer Heterostructure Materisls

Din Guoqing

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The Test and Investigation in the Photovoltage Spectroscopy Spectra on Multilayer Heterostructure Materisls

- The Test and Investigation in the Photovoltage Spectroscopy Spectra on Multilayer Heterostructure Materisls
- Study on Optical communication Issue Z1, (1994)
- 作者机构：
  
  武汉电信器件公司
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：1994，
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[1]丁国庆.半导体长波长异质结构材料光压谱测试探讨[J].光通信研究,1994(Z1):111-118.

Din Guoqing. The Test and Investigation in the Photovoltage Spectroscopy Spectra on Multilayer Heterostructure Materisls. [J]. (Z1).(1994)
[1]丁国庆.半导体长波长异质结构材料光压谱测试探讨[J].光通信研究,1994(Z1):111-118. DOI：

Din Guoqing. The Test and Investigation in the Photovoltage Spectroscopy Spectra on Multilayer Heterostructure Materisls. [J]. (Z1).(1994) DOI：

摘要

本文介绍了ＩｎＰ、ＩｎＧａＡｓ、ＩｎＧａＰ、ＩｎＧａＡｓＰ等的光压港（ＰＶＳ）。并把ＩｎＧａＡｓＰ（在特定组份下）的ＰＶＳ与ＦＦＴ—ＰＬ谱进行了比较；分析和讨论了ＰＶＳ测试的局限性和复杂性；指出了对多层异质结构材料，只有把器件结构、外延工艺、ＥＣＶ测试等结合起来，才可能正确地理解ＰＶＳ给出的测试结果。

Abstract

The PVS spectra for GaAs、InP、InGaAs、InGaAsP etc. are reported in this paper. The PVS of InGaAsP（at the special component） is compared with its FFT - PL. The limitation and complexity for PVS are analysed and discussed. We show that the tested results can be understood correctly

it is necessary to combine device configuration

epitaxy technology with ECV tests for multilayer heterostructure materials.

关键词

PVS长波吸收限λ＿g异质结构材料FFL—PL

Keywords

PVSlongwave absorption limitation λgheterostructure materialsFFT-PL

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