Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability

Li Baogeng; Xu Zhitao; Zhao xianming

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Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability

- Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability
- Study on Optical communication Issue Z1, (1994)
- 作者机构：
  
  武汉电信器件公司
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN364.2
- Published：1994，
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[1]李保根,徐之韬,赵先明.具有高量子效率、低暗电流、高可靠性的平面InGaAs　PIN光电二极管[J].光通信研究,1994(Z1):124-129.

Li Baogeng, Xu Zhitao, Zhao xianming. Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability. [J]. (Z1).(1994)
[1]李保根,徐之韬,赵先明.具有高量子效率、低暗电流、高可靠性的平面InGaAs　PIN光电二极管[J].光通信研究,1994(Z1):124-129. DOI：

Li Baogeng, Xu Zhitao, Zhao xianming. Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability. [J]. (Z1).(1994) DOI：

摘要

本文详细讨论了量子效率和响应时间两个重要参数与器件结构参数的关系，为器件设计提供了依据，并提出了器件的设计方案。根据设计方案研制出的平面ＩｎＧａＡｓＰＩＮ光电二极管，量子效率高达９０％以上，暗电流为１００ｐＡ。在－１０Ｖ偏置下，１８０°Ｃ时ＭＴＴＦ大于３０００ｈ，２３０°Ｃ时ＭＴＴＦ为５００ｈ。

Abstract

The dependence of quantum efficiency and response time on the parameters of device structure were disussed in the paper in detail

which provided the basis for the device design scheme was also derived. According to the design

and the scheme

the pianar photodiodes were realized with quantum efliciency over 90% and dark current at 100pA level （- 5 V ）. MTTF （mean time to failure） of the devices is longer than 3 000 h （180°C ） and 500 h（230°C ） at - 10 V bias

关键词

光电二极管量子效率暗电流

Keywords

PhotodiodeQuantum efficiencyDark current

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Related Institution

School of Science,Hubei University of Technology

College of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications

重庆邮电大学光电工程学院重庆400065

1,2), JIANG Shan~2, YIN Xin-da~2, LI Chuan-wen~2, CAO Wei~2,YANG Zi~2, LI Hai-tao~2, LIU Cui-qing~2, HOU Yun-fei~2, WU Xiao-ping~2

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