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武汉电信器件公司
Published:1998,
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[1]徐之韬,王任凡,陈浩瀚.10 Gbit/s高速GaInAs/InP平面PIN的研究[J].光通信研究,1998(05):39-43.
Xu Zhitao\ \ Wang Renfan\ \ Chen Haohan. Research of 10Gbit/s high speed GaInAs/InP Planar PIN. [J]. (5).(1998)
[1]徐之韬,王任凡,陈浩瀚.10 Gbit/s高速GaInAs/InP平面PIN的研究[J].光通信研究,1998(05):39-43. DOI:
Xu Zhitao\ \ Wang Renfan\ \ Chen Haohan. Research of 10Gbit/s high speed GaInAs/InP Planar PIN. [J]. (5).(1998) DOI:
本文报道了平面结构正面进光高速GaInAs/InP平面PIN光电二极管(使用Si-InP衬底)。该器件具有高的稳定性(在150℃下经1440小时高温老化后,暗电流无变化),大带宽(15GHz),高响应度(在1.3μm波长下,响应度为0.94A/W)。
This paper repoted a top illuminated GaInAs/InP PIN photodiode has been produced in planar junction configaration(with Si InP substrate)
wich combines high reliability(no change in dark current over 1500h at 150℃)
with the wide bandwidth (15GHz) and high responsivity (0.94A/W at 1.3μm).
光电二极管平面PIN光通信光接收机
Photodiode\ planar PIN\ optical communication\ optical receiver
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