最新刊期

    卷 , 期 1 , 1988
    • Xie Yutang
      Issue 1, Pages: 1-9(1988) DOI: 10.13756/j.gtxyj.1988.01.001
      摘要:This paper briefly describes the overall configuration and performance targets of the optical fiber cable experimental project between Hankou and Jingzhou, Its main targets are: 1. in complete conformity with the related recommendations of CCITT; 2.with channels for inter-regional communications; 3. with perfect automatic supervisory system, nonmanned repeater stations; 4. order and supervisory information transmitted through optical path without additional copper wire.  
        
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    • Issue 1, Pages: 10-15(1988) DOI: 10.13756/j.gtxyj.1988.01.002
      摘要:A new high precision optical aligning system is described; analysis and calculations are made theoretically on its practicability design philosophy and experimental results are presented; its application in machining sing(?)emode connectors is also discussed.  
        
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    • Pu Guosheng,Liao Chengen
      Issue 1, Pages: 16-22(1988) DOI: 10.13756/j.gtxyj.1988.01.003
      摘要:It is shown that the dispersion curves of composite dielectric wavegudes with two different ellipt ic-cylinder boundaries are computable by using the second-order f in ite - e lenient method. In this paper, a finite element program is written.The results of calculations are compared with that of previous approximate calculations.  
        
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    • Zhao Liyun
      Issue 1, Pages: 23-31(1988) DOI: 10.13756/j.gtxyj.1988.01.004
      摘要:This paper describes a high speed pseudorandom code generator developed by using China-made ECL devices. Theoretical analysis is made on such pseudo-random code generator, measures are suggested for increasing transmission bit rate, circuits of seven-order and twentythree-order for such generator are also presented.  
        
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    • Ding Guoqing
      Issue 1, Pages: 32-40(1988) DOI: 10.13756/j.gtxyj.1988.01.005
      摘要:Two large area (φ1.6mm) Ge photo-detectors with a groove-mesa structure have been-fabricated adopting Sb-doped N typegermanium crystal with resistivities of 0.35Ω-cm and 6Ω-cm as the substrate material, using ion-implantations of B+ or Be+ for forming a p+ region. The measured photoelectric characteristics indicate that, the spectral response does not depend on the sort of implanted ions and material resistivity when these Ge-PDs are applied at a bias voltage of nearly zero volt, but I-V characteristics and light response (Re) depend on material resistivity, junction depth and the sort of implanted ions.  
        
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    • Yang Zhuang
      Issue 1, Pages: 41-48(1988) DOI: 10.13756/j.gtxyj.1988.01.006
      摘要:Longitudinal-mode fluctuation characteristics of nearly single-longitudinal-mode semiconductor laser is investigated theoretically and experimentally. Statistical characteristics of longitudinal - mode intensity fluctuation of the laser is derived by a simple model, and corresponding experiments are made. The two results are in good agreement.  
        
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