Having been tested through speeding aging lifetest

it is proved that 1. 3μmInGaAsP/InP RWG structure laser diode has much higher reliability than BH structrue LD’s. It is tested under the conditions of ambient temperature of 50℃. 100mA CW and ambient temperature of 80℃、100mA CW.3 220 hours and almost 193 200 device hours are tested

no one is failed during the test period. Under such high strict conditions

its 50℃ extrapolated lifetime （MTTF） is 2×105 hours

and its statistics standard deviation σ= 1. 016; its 80℃ extrapolated lifetime （MTTF）is 3.8×104 hours

and its statistics standard deviation σ=0.804. From these two results we can get its failure activated energy Ea =0. 543 eV.Its predicted 25℃;C lifetime （MTTF）is 1.03×106 hours.