Progress in Development of Ohmic Contacts in Ⅲ-Ⅴ Group Compound Semiconductors

Sun Xuwen

doi:10.13756/j.gtxyj.1987.02.005

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Progress in Development of Ohmic Contacts in Ⅲ-Ⅴ Group Compound Semiconductors

- Progress in Development of Ohmic Contacts in Ⅲ-Ⅴ Group Compound Semiconductors
- Study on Optical communication Issue 2, Pages: 45-49(1987)
- 作者机构：
  
  山东农业机械化学院物理教研室
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.1987.02.005
  CLC：
- Published：1987，
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[1]孙序文.Ⅲ—V族化合物半导体欧姆接触研究的进展[J].光通信研究,1987(02):45-49.

Sun Xuwen. Progress in Development of Ohmic Contacts in Ⅲ-Ⅴ Group Compound Semiconductors. [J]. (2):45-49(1987)
[1]孙序文.Ⅲ—V族化合物半导体欧姆接触研究的进展[J].光通信研究,1987(02):45-49. DOI： 10.13756/j.gtxyj.1987.02.005.

Sun Xuwen. Progress in Development of Ohmic Contacts in Ⅲ-Ⅴ Group Compound Semiconductors. [J]. (2):45-49(1987) DOI： 10.13756/j.gtxyj.1987.02.005.

摘要

本文介绍一种解释欧姆接触的比接触电阻ρ

的新模型。并从理论上分析了利用RF溅射清洗半导体表面可使ρ

降低的机理。

Abstract

In this paper

a new theoretical model is introduced which explains the properties of specific contact resistance Pc of ohmic contact in HI-V group compound semiconductors. Particularly

the mechanism of low pc obtained by RF sputter cleaning on semicoductor surface is analyzed theoretically.

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