1.3μm InGaAsP—InP DH Edge LED

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- 1.3μm InGaAsP—InP DH Edge LED
- Study on Optical communication Issue 3, Pages: 27-29(1987)
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- DOI：10.13756/j.gtxyj.1987.03.005
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- Published：1987，
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[1]徐顺川,,,,,,,,,,沈峰,,,,,,,,,,贺丽雅,,,,,,,,,,吴桐,,,,,,,,,,李容平,,,,,,,,,,张风云.1.3μm InGaAsP—InP双异质结边发光管[J].光通信研究,1987(03):27-29.

Xu Xunchuan, Shen Fen, He Liya, et al. 1.3μm InGaAsP—InP DH Edge LED. [J]. (3):27-29(1987)
[1]徐顺川,,,,,,,,,,沈峰,,,,,,,,,,贺丽雅,,,,,,,,,,吴桐,,,,,,,,,,李容平,,,,,,,,,,张风云.1.3μm InGaAsP—InP双异质结边发光管[J].光通信研究,1987(03):27-29. DOI： 10.13756/j.gtxyj.1987.03.005.

Xu Xunchuan, Shen Fen, He Liya, et al. 1.3μm InGaAsP—InP DH Edge LED. [J]. (3):27-29(1987) DOI： 10.13756/j.gtxyj.1987.03.005.

本文报道一种短条结构的高速大功率1.3μmInGaAsP—InP双异质结边发光管。在100mA的驱动电流下

耦合进入芯径50μm

数值孔径0.2的梯度折射率光纤的光功率大于60μW

上升时间、下降时间均约2ns

光谱半宽600～800A。

High speed and high power 1.3μm InGaAsP —InP DH edge LED

with a short stripe structure are reported. At a driving current of 100mA

optical power coupled into a 50μm core

0.2NA graded index fiber is larger than 60μW.The rise time and fall time are both about 2 ns. The spectral half width is 600—800A.

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