Review on Reliability of Semiconductor Lasers

Xie Jingshan

doi:10.13756/j.gtxyj.1987.04.005

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Review on Reliability of Semiconductor Lasers

- Review on Reliability of Semiconductor Lasers
- Study on Optical communication Issue 4, Pages: 31-41(1987)
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- DOI：10.13756/j.gtxyj.1987.04.005
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- Published：1987，
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[1]解金山.半导体激光器可靠性评论[J].光通信研究,1987(04):31-41.

Xie Jingshan. Review on Reliability of Semiconductor Lasers. [J]. (4):31-41(1987)
[1]解金山.半导体激光器可靠性评论[J].光通信研究,1987(04):31-41. DOI： 10.13756/j.gtxyj.1987.04.005.

Xie Jingshan. Review on Reliability of Semiconductor Lasers. [J]. (4):31-41(1987) DOI： 10.13756/j.gtxyj.1987.04.005.

摘要

本文从以下四个方面详细的综述和评论了半导体激光器的可靠性:影响退化模式的各种因素及寿命的改善;GaAlAs/GaAs激光器与InGaAsP/InP激光器退化模式的主要差别;对当前寿命试验的评论与建议;有关可靠性的进一步研究方向。

Abstract

This paper reviews the reliability of semiconductor lasers from the following four aspects: 1. Factors affecting degradation modes and improvement of dovice lifetime; 2. Basic difference of degradation modes between GaAlAs/GaAs lasers and InGaAsP/InP lasers; 3.Review on and proposal for current lifetime test; 4. Direction for future study of reliability。

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