This paper describes the improvements in quality of LPE wafers and in photo-electric charateristics of devices by adopting low temperature (as low as 560℃) two LPEs and elaborately photoetching
with the lowest threshold current of 17mA
single facet external differential quantum efficiency of 25%
maximum CW lasing temperature of 130℃
maximum output power of more than 30mW. The reliability of devices is enhanced by adopting PbSn welder and improved manufacturing process.