Ternary Alloy of In<sub>0.53</sub>Ca<sub>0.47</sub> As on 100 InP Substrate Grown by LPE at （650-700℃）

Li Shuxiang

doi:10.13756/j.gtxyj.1988.03.003

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Ternary Alloy of In_0.53Ca_0.47 As on 100 InP Substrate Grown by LPE at （650-700℃）

- Ternary Alloy of In_0.53Ca_0.47 As on 100 InP Substrate Grown by LPE at （650-700℃）
- Study on Optical communication Issue 3, Pages: 24-29(1988)
- 作者机构：
  
  武汉电信器件公司助工
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.1988.03.003
  CLC：
- Published：1988，
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[1]李树翔.650～700℃ LPE生长三元合金In_(0.53)Ga_(0.47)As/(100)Inp[J].光通信研究,1988(03):24-29.

Li Shuxiang. Ternary Alloy of In_0.53Ca_0.47 As on 100 InP Substrate Grown by LPE at （650-700℃）. [J]. (3):24-29(1988)
[1]李树翔.650～700℃ LPE生长三元合金In_(0.53)Ga_(0.47)As/(100)Inp[J].光通信研究,1988(03):24-29. DOI： 10.13756/j.gtxyj.1988.03.003.

Li Shuxiang. Ternary Alloy of In_0.53Ca_0.47 As on 100 InP Substrate Grown by LPE at （650-700℃）. [J]. (3):24-29(1988) DOI： 10.13756/j.gtxyj.1988.03.003.

摘要

首先用正规溶液模型

在650～700℃间计算了In

0.53

0.47

As的液相组分。通过实验调整

在653℃、684℃和701℃LPE生长了与（100）InP衬底晶格匹配的非故意掺杂三元合金In

0.53

0.47

并测量了其外延层的载流子浓度、霍尔迁移率和电阻率。684℃生长的外延层具有光滑的表面彤貌

室温下其载流子浓度为3.7×10

-3

霍尔迁移率为9.07×10

/v·s

电阻率为0.19Ω—cm。

Abstract

At first

liquidus compositions of In

0.53

0.47

As in the temperature region from650 to 700℃ are calculated using the regular model. Through the experimental regulation

high quality

unintentional-doped ternary alloy of In

0.53

0.47

As lattice-matched to（100） InP substrates has been grown by LPE at temperatures of 653

684 and 701℃

and the carrier concentration

Hall mobility and resistivity of these epilayers have been measured. The epilayer grown at 684℃ has smooth surface morphology

its carrier concentration is 3.7× 10

-3

Hell mobility 9.07×10

/v.s.

resistivity 0.19 Ω-cm at room temperature.

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Ternary Alloy of In0.53Ca0.47 As on 100 InP Substrate Grown by LPE at （650-700℃）

DOI：10.13756/j.gtxyj.1988.03.003

摘要

Abstract

关键词

Keywords

references

Ternary Alloy of In_0.53Ca_0.47 As on 100 InP Substrate Grown by LPE at （650-700℃）