Din Guoqing. The Structure Design for InGaAs/InGaAsP/lnP SAGM-APD and the Measurement of the Static Optoelectronic Characteristics. [J]. (4):57-64(1989)
Din Guoqing. The Structure Design for InGaAs/InGaAsP/lnP SAGM-APD and the Measurement of the Static Optoelectronic Characteristics. [J]. (4):57-64(1989) DOI: 10.13756/j.gtxyj.1989.04.009.
The Structure Design for InGaAs/InGaAsP/lnP SAGM-APD and the Measurement of the Static Optoelectronic Characteristics
摘要
本文根据雪崩电场及限制隧道电流要求出发
画出结构参数选择空间。估算和选择了InGaAs/InGaAsP/InPSAGM-APD器件结构
测量了光电流-电压的二级阶梯扭折曲线
给出和讨论了与实际测量的M
ρ
比较吻合的经验公式。
Abstract
In this paper
we plot the space of device structure parameters
in which InGaAs/InGaAsP/InP avalanche photodiodes with seperated absorption
grading and multiplication region is estimated and choosed according to the requirement of the avalanche field and the field limitting tunnelling current in this device. Two kinks like a step of I
p
-V curve are measured and explained. The expcrential formula which is in agreement with pratical measurement result of M