您当前的位置：
首页 >
文章列表页 >
Process Investigation of InGaAs（P）/InP Materials by LP-MOCVD
|

    • Process Investigation of InGaAs（P）/InP Materials by LP-MOCVD

    • Study on Optical communication   Issue 4, Pages: 57-60(1995)

    • DOI：10.13756/j.gtxyj.1995.04.004    

      CLC： TN304

    • Published：1995，

    扫 描 看 全 文

  • Liu Tao Li Tongning Jin Jinyan. Process Investigation of InGaAs（P）/InP Materials by LP-MOCVD. [J]. (4):57-60(1995) DOI： 10.13756/j.gtxyj.1995.04.004.

  •  
  •  
更多指标>

0

Views

41

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

MOCVD Growth AlGaInAs/InP Multiple Quantum Well Laser
Study on gain polarization sensitivity of quantum-well semiconductor optical amplifier

Related Author

No data

Related Institution

College of Physics and Optoelectronics, Taiyuan University of Technology
College of Information Engineering,Taiyuan University of Technology
Wuhan Telecommunication Devices Co.,Ltd.
1,2),Huang Dexiu~1,Liu Deming~2
华中科技大学光电子科学与工程学院
0