您当前的位置：
首页 >
文章列表页 >
High performance, low-threshold high-temperature uncooled 1.3 μm AlGaInAs/InP MQW laser diode
|

    • High performance, low-threshold high-temperature uncooled 1.3 μm AlGaInAs/InP MQW laser diode

    • Study on Optical communication   Issue 4, Pages: 48-51(2001)

    • DOI：10.13756/j.gtxyj.2001.04.013    

      CLC： TN248

    • Published：2001，

    扫 描 看 全 文

  • ZHENG Peng 1, WANG Ren fan 2, YUE Ai wen 2, et al. High performance, low-threshold high-temperature uncooled 1.3 μm AlGaInAs/InP MQW laser diode. [J]. (4):48-51(2001) DOI： 10.13756/j.gtxyj.2001.04.013.

  •  
  •  
更多指标>

0

Views

93

下载量

2

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

High power 1.31 um AlGaInAs strain multiquantum well DFB laser

Related Author

No data

Related Institution

Wuhan Research Institute of P&T
0