Study on gain polarization sensitivity of quantum-well semiconductor optical amplifier

Huang Lirong~

doi:10.13756/j.gtxyj.2006.04.023

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Study on gain polarization sensitivity of quantum-well semiconductor optical amplifier

- Study on gain polarization sensitivity of quantum-well semiconductor optical amplifier
- Study on Optical communication Issue 4, Pages: 68-70(2006)
- 作者机构：
  
  1. 华中科技大学武汉光电国家实验室
  2. 华中科技大学光电子科学与工程学院
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.2006.04.023
  CLC： TN722
- Published：2006，
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[1]黄黎蓉,黄德修,刘德明.量子阱半导体光放大器的增益偏振相关性研究[J].光通信研究,2006(04):68-70.

Huang Lirong~. Study on gain polarization sensitivity of quantum-well semiconductor optical amplifier. [J]. (4):68-70(2006)
[1]黄黎蓉,黄德修,刘德明.量子阱半导体光放大器的增益偏振相关性研究[J].光通信研究,2006(04):68-70. DOI： 10.13756/j.gtxyj.2006.04.023.

Huang Lirong~. Study on gain polarization sensitivity of quantum-well semiconductor optical amplifier. [J]. (4):68-70(2006) DOI： 10.13756/j.gtxyj.2006.04.023.

摘要

应用能带计算理论

研究了张应变量大小、量子阱厚度对量子阱半导体光放大器（SOA）中的增益偏振相关性的影响。采用张应变量子阱为有源区

设计了增益偏振无关的1.55μm的SOA

它可以在较宽的载流子浓度范围、较宽的光波长范围内满足增益对偏振的不灵敏要求。另外

还采用混合应变量子阱为有源区

设计了增益偏振无关的1.31μm的SOA。

Abstract

Based on energyband engineering theory

the influences of tensile strain and quantum-well width on the gain polarization dependence of quantum-well Semiconductor Optical Amplifiers（SOA） are investigated.A 1.55μm gain polarization-insensitive SOA with tensile strained quantum-well as the active region is designed

which has very low polarization sensitivity in a wide range of carrier density and optical wavelengths.Also designed is a 1.31μm gain polarization-insensitive SOA with mixed tensile and compressively strained wells as the active region.

关键词

半导体光放大器增益量子阱应变

Keywords

semiconductor optical amplifier（SOA）gainquantum wellstrain

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