Impacts of plasma-induced disordering QWI on InP/InGaAsP structure

Guo Jian1; Zhao Jianyi1; Huang Xiaodong1; Ma Weidong1

doi:10.13756/j.gtxyj.2012.05.001

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Impacts of plasma-induced disordering QWI on InP/InGaAsP structure

- Impacts of plasma-induced disordering QWI on InP/InGaAsP structure
- Study on Optical communication Issue 5, Pages: 37-39(2012)
- 作者机构：
  
  1. 光纤通信技术和网络国家重点实验室
  2. 武汉光迅科技股份有限公司
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.2012.05.001
  CLC： TN256
- Published：2012，
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[1]郭剑,赵建宜,黄晓东,马卫东.等离子诱导QWI对InP/InGaAsP结构的影响[J].光通信研究,2012(05):37-39+49.

Guo Jian1, Zhao Jianyi1, Huang Xiaodong1, et al. Impacts of plasma-induced disordering QWI on InP/InGaAsP structure. [J]. (5):37-39(2012)
[1]郭剑,赵建宜,黄晓东,马卫东.等离子诱导QWI对InP/InGaAsP结构的影响[J].光通信研究,2012(05):37-39+49. DOI： 10.13756/j.gtxyj.2012.05.001.

Guo Jian1, Zhao Jianyi1, Huang Xiaodong1, et al. Impacts of plasma-induced disordering QWI on InP/InGaAsP structure. [J]. (5):37-39(2012) DOI： 10.13756/j.gtxyj.2012.05.001.

摘要

为了比较简单地在同一外延片上得到具有不同带隙结构的有源器件与无源器件的PIC（光子集成电路）和OEIC（光电子集成电路）

采用等离子诱导QWI（量子阱混杂）与RTA（快速热退火）技术获得了InP/InGaAsP结构材料的带隙蓝移

其中通过在材料表面沉积不同占空比的SiO2灰度掩膜来灵活控制带隙偏移量。实验中这种方法在基片上获得了5种带隙波长

其中最大波长偏移为75nm

实验结果说明这种技术是实现PIC和OEIC的有效手段

特别是在多带隙结构中具有广阔的应用前景。

Abstract

In order to realize in a simple way Photonic Integrated Circuits（PIC） and Optoelectronic Integrated Circuits（OEIC） for active and passive optical devices with different band-gap structures in the same wafer

this paper acquires a band-gap blue-shift in InP/InGaAsP structure material by using plasma-induced disordering Quantum-Well Intermixing（QWI） and Rapid Thermal Annealing（RTA） technologies

in which the band-gap offset can be flexibly controlled by depositing SiO2 gray-scale masks with different duty ratios on the material surface.In the experiment

five kinds of bandgap wavelengths are obtained on the substrate in this method

among which the maximum offset is 75 nm.These results show that this technology is an effective means for realizing PIC and OEIC and has a broad prospect of applications in multi-bandgap structures.

关键词

光子集成量子阱混杂多量子阱

Keywords

photonic integrationQWImulti-quantum well

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Department of Communication Science and Engineering,School of Science and Engineering, State Key Lab of ASIC and System,Fudan University

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