Si light source is the core device for making Si-based integrated optoelectronic chips.In recent years

multiple major results have been achieved in this respect at home and abroad

but there is still lack of small-size

low power consuming

process compatible and highly efficient Si-based emitters appropriate for the next generation large-scale optoelectronic integrated chips.In this paper

our research results in making Si-based light emitting devices in Ge quantum dots embedded in Si photonic crystal microcavities are introduced.Among others

we realized resonant light emission in the communication waveband at room-temperature by embedding the Ge self-assembled quantum dots grown by the molecular beam epitaxy method in the Si photonic crystal microcavities and the positioning of Ge quantum dots by their growth on the patterned sapphire substrate

and the Si-based light emitters based single Ge quantum dot by precisely embedding them in the photonic crystal microcavities.