New Waveguide Switch Design and Characteristics Analysis

MENG Ai-ni

doi:10.13756/j.gtxyj.2016.04.013

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New Waveguide Switch Design and Characteristics Analysis

- New Waveguide Switch Design and Characteristics Analysis
- Study on Optical communication Issue 4, Pages: 42-44(2016)
- 作者机构：
  
  潍坊科技学院
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.2016.04.013
  CLC： O53;TN25
- Published：2016，
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[1]孟爱妮.新型波导的开关设计及特性分析[J].光通信研究,2016(04):42-44.

MENG Ai-ni. New Waveguide Switch Design and Characteristics Analysis. [J]. (4):42-44(2016)
[1]孟爱妮.新型波导的开关设计及特性分析[J].光通信研究,2016(04):42-44. DOI： 10.13756/j.gtxyj.2016.04.013.

MENG Ai-ni. New Waveguide Switch Design and Characteristics Analysis. [J]. (4):42-44(2016) DOI： 10.13756/j.gtxyj.2016.04.013.

摘要

通过SPP（表面等离子体激元）的优越特性分析了楔形波导SPP的透射特性

设计了嵌有光栅的楔形等离子体波导结构。对SPP激发的分析采用衍射光栅耦合的方式

通过改变金属薄膜厚度以及入射光角度得出其结构特性。结果表明:金属薄膜厚度的减少会导致透射带宽迅速降低

透射率也随之下降;而入射光角度的改变会导致透射光效率的变化。模拟了楔形波导结构的表面等离子体

得到了薄膜厚度的变化透射曲线和入射光角度透射率

得出了透射率变化图。研究结果对半导体设备的纳米等离子激元耦合具有一定的意义。

Abstract

The transmission characteristics of the wedge-shaped SPP waveguide are analyzed through SPP superior characteristics.In this paper

we design the wedge plasma waveguide structure with embedded grating.Diffraction grating coupling is used to analyze the exciting phenomenon of SPP.The structure characteristics are obtained by changing the thickness of the metal film and the incident light angle.The calculation results show that the metal film thickness reduction will lead to fast reduction of the transmission bandwidth as well as the transmission rate.The change of the incident light angle will also lead to the variation of the transmitted light efficiency.We also simulate the wedge surface plasmon waveguide structure to obtain the film thickness change transmission curve

angle of the incident light transmittance

and the corresponding transmission rate variation.The results in this paper are significant for nanoplasmons coupling of semiconductor equipment.

关键词

楔形波导表面等离子体光栅金属薄膜

Keywords

strip waveguidesurface plasmongratingmetal film

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Department of Electronic Engineering, Taiyuan Institute of Technology

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