Simulation and Analysis of GaN Laser based on REC Technology

GAO Lü; HU Fang-ren

doi:10.13756/j.gtxyj.2018.02.13

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Simulation and Analysis of GaN Laser based on REC Technology

- Simulation and Analysis of GaN Laser based on REC Technology
- Study on Optical communication Issue 2, Pages: 44-47(2018)
- 作者机构：
  
  南京邮电大学光电工程学院
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.2018.02.13
  CLC： TN248
- Published：2018，
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[1]高律,胡芳仁.基于REC技术的氮化镓激光器仿真分析[J].光通信研究,2018(02):44-47.

GAO Lü, HU Fang-ren. Simulation and Analysis of GaN Laser based on REC Technology. [J]. (2):44-47(2018)
[1]高律,胡芳仁.基于REC技术的氮化镓激光器仿真分析[J].光通信研究,2018(02):44-47. DOI： 10.13756/j.gtxyj.2018.02.13.

GAO Lü, HU Fang-ren. Simulation and Analysis of GaN Laser based on REC Technology. [J]. (2):44-47(2018) DOI： 10.13756/j.gtxyj.2018.02.13.

摘要

针对重构等效啁啾（REC）技术是否适用于氮化镓激光器的问题

提出了一种基于该技术的405nm波段分布反馈（DFB）半导体激光器。基于传输矩阵法对该结构激光器的光学性能进行了仿真分析。仿真结果表明

利用该技术实现的激光器具有良好的光电特性

阈值电流约为25.6 mA

斜效率约为1.17 mW/mA

在30、50和70 mA的注入电流下

分别得到了404.93、404.87和404.82nm的单模激射

边模抑制比都超过了40dB。这一结果为此技术在氮化镓激光器上的应用提供了参考。

Abstract

In order to assess whether the Reconstruction-Equivalent-Chirp（REC）technology can be adapted to a GaN laser

a405 nm wave band Distributed Feedback（DFB）semiconductor laser based on this technology is proposed.The optical performance of the designed laser in this paper is simulated and analyzed according to the transfer matrix method.The simulation results show that the designed laser has good photoelectric characteristics by using this technology.The threshold current is around 25.6 mA with a slope efficiency of 1.17 mW/mA.The single mode emission wavelength of 404.93

404.87 and404.82 nm is obtained with the injection current of 30

50 and 70 mA respectively.The side-mode suppression ratio is over40 dB in all cases.This result provides a reference for the application of this technology on GaN lasers.

关键词

半导体激光器分布反馈氮化镓重构等效啁啾

Keywords

Semiconductor laserdistributed feedbackGaNreconstruction-equivalent-chirp

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