YUE Yun-long, HU Ya-qi, CAO Bo-yi, et al. Low Switching Voltage Nested Micro-Ring Resonant Electro-Optic Switch. [J]. (3):42-46(2019) DOI: 10.13756/j.gtxyj.2019.03.009.
Low Switching Voltage Nested Micro-Ring Resonant Electro-Optic Switch
In the traditional micro-ring electro-optic switch structure
the function of switching in optical communication system is realized by designing different positions between micro-ring and direct waveguide. However
the switching voltage is so high that it wastes resources. Based on the coupled mode theory
electro-optic modulation theory
micro-ring resonance theory
and transfer matrix theory
a device model of nested micro-ring dual-channel electro-optic switch is proposed in this paper. We conduct a simulated analysis of this device at the resonant wavelength of 1 552 nm. The simulation results show that the device model has a very small switching voltage of only 1 V with crosstalk less than-35 dB and insertion loss less than 4 dB. The total time domain response is 5.33 ps with rise and fall time of only 0.25 ps. The structure has the characteristics of low switching voltage
short response time and large spectral bandwidth
which enhances the performance of dense wavelength division multiplexing system.