A Novel Compact Electro-optic Modulator based on Photonic Crystals

ZHOU Hao-tian; CHEN He-ming

doi:10.13756/j.gtxyj.2019.05.010

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A Novel Compact Electro-optic Modulator based on Photonic Crystals

- A Novel Compact Electro-optic Modulator based on Photonic Crystals
- Study on Optical communication Issue 5, Pages: 46-51(2019)
- 作者机构：
  
  1. 南京邮电大学电子与光学工程学院微电子学院
  2. 南京邮电大学贝尔英才学院
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.2019.05.010
  CLC： O734;TN15
- Published：2019，
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[1]周昊天,陈鹤鸣.基于光子晶体的紧凑型电光调制器[J].光通信研究,2019(05):46-51.

ZHOU Hao-tian, CHEN He-ming. A Novel Compact Electro-optic Modulator based on Photonic Crystals. [J]. (5):46-51(2019)
[1]周昊天,陈鹤鸣.基于光子晶体的紧凑型电光调制器[J].光通信研究,2019(05):46-51. DOI： 10.13756/j.gtxyj.2019.05.010.

ZHOU Hao-tian, CHEN He-ming. A Novel Compact Electro-optic Modulator based on Photonic Crystals. [J]. (5):46-51(2019) DOI： 10.13756/j.gtxyj.2019.05.010.

摘要

光通信技术高速发展和光子集成对调制器的尺寸和性能提出了更高的要求

文章提出了一种基于Aubry-André-Harper（AAH）谐振腔的电光调制器

该器件以硅材料为基底

在其上刻蚀圆形空气孔形成三角型光子晶体结构

在光子晶体线缺陷处引入AAH谐振腔

并通过掺杂在线缺陷处形成p-n结

根据硅基载流子色散效应改变调制电压使基底平板折射率发生改变

进而导致谐振波长位移

达到调制目的。应用Lumerical仿真软件对器件进行了仿真分析

结果表明

器件长度为9.03μm

3 dB带宽为1.01 nm

当折射率差达到0.01时可实现1 550 nm波长的横电（TE）模窄带宽调制

器件插入损耗为1.33 dB

消光比为29.13 dB

工艺误差对器件性能影响较小。该电光调制器尺寸小易于集成

且具有高消光比

对硅光子集成器件具有重要意义。

Abstract

With the rapid development of optical communication technology

the requirement of the size and performance of the modulator are higher. Therefore

an electro-optic modulator based on Aubry-André-Harper（AAH） resonator is proposed in this paper. The device is based on silicon and etched circular air holes to form triangular photonic crystal structure. AAH resonator is introduced into the line defect of photonic crystal. The p-n junction is formed by doping the line defect. According to the carrier dispersion effect of silicon

the refractive index of the substrate plate is changed by changing the modulation voltage

which results in the displacement of the resonant wavelength and achieves the modulation purpose. The Lumerical simulation software is used to analyze the device performance. The simulation results show that the 3 dB bandwidth is 1.01 nm on the device with 9.03 μm length. When the refractive index difference reaches 0.01

Transverse Electic（TE） mode narrow bandwidth modulation with 1 550 nm wavelength can be realized. The insertion loss of the device is 1.33 dB and the extinction ratio is 29.13 dB. The process error has little effect on the device performance. The electro-optic modulator is easy to integrate

small in size and has high extinction ratio

which is of great significance for the development of integrated optical devices.

关键词

光通信调制器光子晶体Aubry-André-Harper谐振腔模型

Keywords

optical communicationModulatorphotonic crystalAAH resonator mode

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