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Research Progress of Communication Laser and Its Modulation Technology
- Study on Optical Communications Issue 2, Pages: 22004801-22004812(2024)
- 作者机构：
1.西安航空职业技术学院 人工智能学院，西安 710089
2.西安理工大学 自动化与信息工程学院，西安 710048
3.兰州理工大学 计算机与通信学院，兰州 730050
4.西安工业大学 电子信息工程学院，西安 710021
5.西安工程大学 电子信息学院，西安 710600
- 作者简介：
- 基金信息：
DOI：10.13756/j.gtxyj.2024.220048
CLC： TN248Published：10 April 2024，
Received：12 January 2023，
Revised：31 January 2023，
扫 描 看 全 文
高晓梅，舒玉婷，梁静远，等. 通信激光器及其调制技术研究进展[J].光通信研究，2024(2):220048.
Gao X M, Shu Y T, Liang J Y, et al. Research Progress of Communication Laser and Its Modulation Technology [J]. Study on Optical Communications, 2024(2):220048.
高晓梅，舒玉婷，梁静远，等. 通信激光器及其调制技术研究进展[J].光通信研究，2024(2):220048. DOI： 10.13756/j.gtxyj.2024.220048.
Gao X M, Shu Y T, Liang J Y, et al. Research Progress of Communication Laser and Its Modulation Technology [J]. Study on Optical Communications, 2024(2):220048. DOI： 10.13756/j.gtxyj.2024.220048.
摘要
在光通信领域，激光器及其调制带宽、调制速率对无线光通信至关重要。对半导体激光器信号的调制方式主要有内调制和外调制两种。这两种调制技术具有各自的特点，适用于光纤通信中的不同领域，都是当前重要的研究热点。内调制激光器又称为直接调制激光器，因其具有高速传输以及低成本的特点，成为目前应用在第五代移动通信技术（5G）前传和数据中心中的高性价比光源。而外调制激光器不存在光源附加的Chirp，所以可以有效地克服光纤色散造成的复合二次差拍（CSB）失真。文章在回顾通信激光器及其调制技术发展历程的基础上，介绍了西安理工大学在该领域所做的工作以及取得的主要进展。针对半导体激光器发生非线性失真的内外因素进行讨论，仿真响应特性各参数、线性化补偿方法以及功率控制系统对光发射器件输出光源的作用，并分析了温度的起伏对激光器和调制器件输出功率产生的影响。采用折射率椭球基本理论和数值分析，分别在纵向和横向调制下，讨论出射光强随温度的变化趋势。结果表明，纵向调制下出射光光强随温度的变化趋势只与铌酸锂（LN）晶体折射率的变化有关；横向调制下出射光光强随温度的变化趋势不仅要受到晶体折射率的影响，还要受到晶体尺寸及其膨胀系数的影响，因此可以利用特殊尺寸的晶体来提高电光调制器的温度稳定性。
Abstract
In the field of optical communication
laser and its modulation bandwidth and modulation rate are very important for optical wireless communication. There are two main modulation modes for semiconductor laser signal: internal modulation and external modulation. These two modulation technologies have their own characteristics and are suitable for different fields of optical fiber communication. Internal modulation laser
also known as direct modulation laser
has become a cost-effective light source for the Fifth Generation Mobile Communication Technology (5G) fronthaul and data center because of its high-speed transmission and low cost. There is no additional Chirp of light source in external modulation laser
so the Composite Second Beat (CSB) distortion caused by fiber dispersion can be effectively overcomed. On the basis of reviewing the development history of communication laser and its modulation technology
this paper introduces the work and main progress made by Xi’an University of Technology in this field. This paper discusses the internal and external factors of nonlinear distortion of semiconductor laser
simulates the effects of various parameters of response characteristics
linearization compensation method and power control system on the output light source of light emitting device
and analyzes the influence of temperature fluctuation on the output power of laser and modulation device. Based on the basic theory of refractive index ellipsoid and numerical analysis
the variation trend of emitted light intensity with temperature is discussed under the longitudinal and transverse modulation
respectively. The results show that the variation trend of outgoing light intensity with temperature under longitudinal modulation is only related to the refractive index of Lithium Niobate (LN) crystal. Under transverse modulation
the variation trend of outgoing light intensity with temperature is affected not only by the refractive index of the crystal
but also by the crystal size and its expansion coefficient. Therefore
the special size crystal can be used to improve the temperature stability of the electro-optic modulator.
关键词
无线光通信激光器直接调制外调制响应特性
Keywords
optical wireless communicationlaserdirect modulationexternal modulationresponse characteristic
references
Hall R N, Fenner G E, Kingsley J D, et al. Coherent Light Emission from GaAs Junctions[J]. Physical Review Letters, 1962, 366(9): 186-191.
王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展[J]. 发光学报, 2015, 36(1): 1-19.
Wang L J, Ning Y Q, Qin L, et al. Development of High Power Diode Laser [J]. Journal of Luminescence, 2015, 36(1): 1-19.
Soda H, Iga K, Kitahara C, et al. GaInAsP/InP Surface Emitting Injection Lasers[J]. Japanese Journal of Ap-plied Physics, 1979, 18(12): 2329-2330.
Koyama F, Kinoshita S, Iga K.Room-temperature Continuous Wave Lasing Characteristics of a GaAs Vertical Cavity Surface Emitting Laser[J]. Applied Physics Letters, 1989, 55(3): 221-222.
Lear K L, Mar A, Choquette K D, et al. High-frequency Modulation of Oxide-confined Vertical Cavity Surface Emitting Lasers[J]. Electronics Letters, 1996, 32(5): 457-458.
王启明. 中国半导体激光器的历次突破与发展 [J]. 中国激光, 2010, 37(9): 2190-2197.
Wang Q M. Breakthroughs and Development of Semiconductor Lasers in China [J]. China Laser, 2010, 37(9): 2190-2197.
Johnson R H, Serkland D K. 17G Directly Modulated Datacom VCSELs [C]//2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science. San Jose, CA, USA: IEEE, 2008: 4551302.
Kuchta D M, Rylyakov A V, Doany F E, et al.A 71-Gb/s NRZ Modulated 850 nm VCSEL based Optical Link [J]. IEEE Photonics Technology Letters, 2015, 27(6): 577-580.
陈良惠, 杨国文, 刘育衔. 半导体激光器研究进展[J]. 中国激光, 2020, 47(5): 13-31.
Chen L H, Yang G W, Liu Y X. Development of Semiconductor Lasers [J]. China Laser, 2020, 47(5): 13-31.
Lavrencik J, Varughese S, Ledentsov N, et al.168 Gbps PAM-4 Multimode Fiber Transmission through 50 m Using 28 GHz 850 nm Multimode VCSELs [C]//2020 Optical Fiber Communications Conference and Exhibition (OFC). San Diego, CA, USA: IEEE, 2020: 19629525.
Zuo T J, Zhang T T, Zhang S, et al. 850 nm VCSEL based Single Lane 200 Gbps PAM-4 Transmission for Datacenter Intra Connections[J]. IEEE Photonics Technology Letters, 2021, 33(18): 1042-1045.
张建伟, 张星, 周寅利, 等. 1 550 nm毫瓦级单横模垂直腔面发射半导体激光器[J]. 物理学报, 2022, 71(6): 064204.
Zhang J W, Zhang X, Zhou Y L, et al. Single Transverse Mode Vertical Cavity Surface Emitting Semiconductor Laser with 1 550 nm mW Level[J]. Acta Physica Sinica, 2022, 71(6): 064204.
韩赛一, 田思聪, 徐汉阳, 等. 高速1 550 nm垂直腔面发射激光器研究进展[J]. 发光学报, 2022, 43(5): 736-744.
Han S Y, Tian S C, Xu H Y, et al. Research Progress of High-speed 1 550 nm Vertical Cavity Surface Emitting Laser[J]. Journal of Luminescence, 2022, 43(5): 736-744.
唐晓东, 曾庆济, 金耀辉, 等. 全光通信网光电器件及其最新进展(1)[J]. 光通信技术, 2001, 25(2): 90-94.
Tang X D, Zeng Q J, Jin Y H, et al.Optoelectronic Devices in All Optical Communication Network and Their Latest Progress(1) [J]. Optical Communication Technology, 2001, 25(2): 90-94.
田琦, 韩宇, 张瑞罡, 等. 高速直接调制半导体激光器的研究[J]. 光通信研究, 2023(2): 55-62.
Tian Q, Han Y, Zhang R G, et al. Research on High-speed Direct Modulation Semiconductor Laser [J]. Study on Optical Communications, 2023(2): 55-62.
Morton P A, Logan R A, Tanbun-Ek T, et al.25 GHz Bandwidth 1.55 μm GaInAsP P-doped Strained Multiquantum-well Lasers [J]. Electronics Letters, 1992, 28(23): 2156-2157.
Matsui Y, Murai H, Arahira S, et al. 30 GHz Bandwidth 1.55 μm Strain-compensated InGaAlAs-InGaAsP MQW Laser [J]. IEEE Photonics Technology Letters, 1997, 9(1): 25-27.
Nakahara K, Wakayama Y, Kitatani T, et al. Direct Modulation at 56 and 50 Gb/s of 1.3 μm InGaAlAs Ridge-Shaped-BH DFB Lasers [J]. IEEE Photonics Technology Letters, 2014, 27(5): 534-536.
Liu G H, Zhao G Y, Sun J Q, et al.Experimental Demonstration of DFB Lasers with Active Distributed Reflector [J]. Optics Express, 2018, 26(23): 29784-29785.
Sasada N, Nakajima T, Sekino Y, et al. Wide-temperature-range (25-80 ℃) 53-Gbaud PAM4(106 Gb/s) Operation of 1.3 μm Directly Modulated DFB Lasers for 10 km Transmission [J]. Journal of Lightwave Technology, 2019, 37(7): 1686-1689.
陆丹, 杨秋露, 王皓, 等. 通信波段半导体分布反馈激光器[J]. 中国激光, 2020, 47(7): 1-21.
Lu D, Yang Q L, Wang H, et al. Review of Semiconductor Distributed Feedback Lasers in the Optical Communication Band [J]. China Journal of Laser, 2020, 47(7): 1-21.
Matsui Y, Schatz R, Pham T, et al. 55 GHz Bandwidth Distributed Reflector Laser [J]. Journal of Lightwave Technology, 2017, 35(3): 397-403.
Yamaoka S, Diamantopoulos P, Nishi H, et al. Directly Modulated Membrane Lasers with 108 GHz Bandwidth on A High-thermal-conductivity Silicon Carbide Substrate [J]. Nature Photonics, 2021, 15(1): 28-35.
Heidari E, Dalir H, Ahmed M F, et al. Hexagonal Transverse Coupled Cavity VCSEL Redefining the High-speed Lasers[J]. Nanophotonics, 2021, 9(16): 4743-4748.
王卫东, 吴伯瑜, 李德杰, 等. 适于长距离高速率光纤通信系统的Ti: LiNbO3 M-Z型强度调制器[J]. 通信学报, 1994, 15(6): 52-57.
Wang W D, Wu B Y, Li D J, et al.Ti: LiNbO3 M-Z Intensity Modulator for Long-distance High-speed Optical Fiber Communication System [J]. Journal of Communication, 1994, 15(6): 52-57.
张兵, 吴伯瑜, 周伟勤, 等. 40 GHz铌酸锂电光调制器[J]. 光电子·激光, 2001, 12(11): 1199-1201.
Zhang B, Wu B Y, Zhou W Q, et al. 40 GHz Lithium Niobate Electro-optical Modulator [J]. Optoelectronics Laser, 2001, 12(11): 1199-1201.
高致慧, 甘庆云, 万俊康. 新型结构超宽带LiNbO3电光调制器的优化设计[J]. 光子学报, 2005, 34(3): 365-368.
Gao Z H, Gan Q Y, Wan J K. The Optimization and Design of Ultra-broad-bandwidth LiNbO3 Electro-optic Modulator with a New Structure [J]. Acta Photonica Sinica, 2005, 34(3): 365-368.
Wang C, Zhang M, Chen X, et al. Integrated Lithium Niobate Electro-optic Modulators Operating at CMOS-Compatible Voltages [J]. Nature, 2018, 562(7725): 101-104.
He M B, Xu M Y, Ren Y X, et al. High-performance Hybrid Silicon and Lithium Niobate Mach-Zehnder Modulators for 100 Gbit/s and Beyond [J]. Nature Photonics, 2019, 13(5): 359-364.
Kharel P, Reimer C, Luke K, et al. Breaking Voltage-bandwidth Limits in Integrated Lithium Niobate Modulators Using Micro-structured Electrodes [J].Optica, 2021, 8(3): 357-363.
Yang F, Fang X S, Chen X Y, et al. Monolithic Thin Film Lithium Niobate Electro-optic Modulator with over 110 GHz Bandwidth [J]. Chinese Optics Letters, 2022, 20(2): 148-152.
Xu M Y, He M B, Zhang H G, et al. High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Plat-form [J]. Nature Communications, 2020, 11(1): 3911.
Xu M Y, Zhu Y T, Pittalà F, et al. Dual-polarization Thin-film Lithium Niobate In-phase Quadrature Modulators for Terabit-per-second Transmission [J].Optica, 2022, 9(1): 61-62.
柯熙政, 杨尚君, 吴加丽, 等. 西安理工大学无线光通信系统自适应光学技术研究进展[J].强激光与粒子束, 2021, 33(8): 30-52.
Ke X Z, Yang S J, Wu J L, et al.Research Progress of Adaptive Optics Technology in Wireless Optical Communication System of Xi’an University of Technology [J]. High Power Laser and Particle Beams, 2021, 33(8): 30-52.
柯熙政, 邓莉君. 无线光通信[M]. 北京: 科学出版社, 2016.
Ke X Z, Deng L J. Wireless Optical Communication [M]. Beijing: Science Press, 2016.
刘昭辉. 半导体激光器和光电探测器响应特性的研究[D]. 西安: 西安理工大学, 2019.
Liu Z H. Study on Response Characteristics of Semiconductor Laser and Photodetector [D]. Xi’an: Xi’an University of Technology, 2019.
柯熙政. 无线光正交频分复用原理及应用[M]. 北京: 科学出版社. 2018.
Ke X Z. Principle and Application of Wireless Optical Orthogonal Frequency Division Multiplexing[M]. Beijing: Science Press, 2018.
张璐. 无线激光通信中激光器的非线性特性研究[D]. 西安: 西安理工大学, 2016.
Zhang L. Research on Nonlinear Characteristics of Laser in Wireless Laser Communication [D]. Xi’an: Xi’an University of Technology, 2016.
史炜坚. 大气激光通信中非限幅QPSK类正弦调制的分析研究[D]. 西安: 西安理工大学, 2014.
Shi W J. Analysis and Research on Non-limiting QPSK-like Sinusoidal Modulation in Atmospheric Laser Communication [D]. Xi’an: Xi’an University of Technology, 2014.
范桂东. 半导体激光器功率控制系统的研究[D]. 西安: 西安理工大学, 2016.
Fan G D.Research on Power Control System of Semiconductor Laser[D]. Xi’an: Xi’an University of Technology, 2016.
赵晨晨. 半导体激光器髙速率内调制技术的研究与设计[D]. 西安: 西安理工大学, 2016.
Zhao C C. Research and Design of High-speed Internal Modulation Technology of Semiconductor Laser[D]. Xi’an: Xi’an University of Technology, 2016.
林凯燕, 许婕, 王红成, 等.单轴晶体电光调制器的温度特性[J]. 中国激光, 2006, 33(8): 1051-1055.
Lin K Y, Xu J, Wang H C, et al. Temperature Properties of Uniaxial Crystal Electro-optic Modulator [J]. China Journal of Lasers, 2006, 33(8): 1051-1055.
杨晓. 电光调制技术及驱动源研究[D]. 西安: 西安理工大学, 2016.
Yang X. Research on Electro-optic Modulation Technology and Driving Source [D]. Xi’an: Xi’an University of Technology, 2016.
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