InGaAs/InGaAsP/InP SAGM—APD暗电流与光倍增因子的温度特性

丁国庆

doi:10.13756/j.gtxyj.1990.04.007

您当前的位置：

首页 >

文章列表页 >

InGaAs/InGaAsP/InP SAGM—APD暗电流与光倍增因子的温度特性

- InGaAs/InGaAsP/InP SAGM—APD暗电流与光倍增因子的温度特性
- The Temperature Characteristics of the Dark Current and the Optical Multiplication Factor for InGaAs/InGaAsP/InP SAGM-APD
- 光通信研究 1990年第4期页码：48-55
- 作者机构：
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.1990.04.007
  中图分类号：
- 纸质出版日期：1990，
扫描看全文
[1]丁国庆.InGaAs/InGaAsP/InP SAGM—APD暗电流与光倍增因子的温度特性[J].光通信研究,1990(04):48-55.

Ding Guoqing. The Temperature Characteristics of the Dark Current and the Optical Multiplication Factor for InGaAs/InGaAsP/InP SAGM-APD[J]. 1990,(4):48-55.
[1]丁国庆.InGaAs/InGaAsP/InP SAGM—APD暗电流与光倍增因子的温度特性[J].光通信研究,1990(04):48-55. DOI： 10.13756/j.gtxyj.1990.04.007.

Ding Guoqing. The Temperature Characteristics of the Dark Current and the Optical Multiplication Factor for InGaAs/InGaAsP/InP SAGM-APD[J]. 1990,(4):48-55. DOI： 10.13756/j.gtxyj.1990.04.007.

摘要

本文论述了暗电流I和光倍增因子M

与温度T的关系

并测量了InGaAs/InGaAsP/InP SAGM-APD的暗电流—温度变化率与M

-T特性。当温度由20℃升至90℃时

暗电流将增大10～30倍;而由20℃升至60℃时

光倍增因字M

将减小1/3左右。文中还建议以严格的高低温循环来淘汰可能早期失效的SAGM-APD管芯。

Abstract

In this paper

the dependences of the dark current and optical multiplication factor on temperature for InGaAs/InGaAsP/InP SAGM-APD have been investigated and measured. Experiments show that the dark current will increase 10 to 30 times when the temperature rises up from 20℃ to 90℃

and the optical multiplication factor M

will decrease by about 1/3 when the temperature rises from 20℃ to 60℃.The phenomena observed during the measurement are discussed. The paper also suggests to eliminate the nonsuitable chips for the SAGM-APD by the critical high-to-low temperature cycling.

关键词

Keywords

references

更多指标>

浏览量

178

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

暂无数据