In order to realize in a simple way Photonic Integrated Circuits（PIC） and Optoelectronic Integrated Circuits（OEIC） for active and passive optical devices with different band-gap structures in the same wafer

this paper acquires a band-gap blue-shift in InP/InGaAsP structure material by using plasma-induced disordering Quantum-Well Intermixing（QWI） and Rapid Thermal Annealing（RTA） technologies

in which the band-gap offset can be flexibly controlled by depositing SiO2 gray-scale masks with different duty ratios on the material surface.In the experiment

five kinds of bandgap wavelengths are obtained on the substrate in this method

among which the maximum offset is 75 nm.These results show that this technology is an effective means for realizing PIC and OEIC and has a broad prospect of applications in multi-bandgap structures.