In order to develop a strain high Multiple Quantum Well（MQW）laser with high linearity and high power

the strain compensation is theoretically calculated.Metal Organic Chemical Vapor Deposition（MOCVD）process is used to develop the AlGaInAs strain compensated MQW structure.In the final active region

seven sets of tensional strain alternation potential barrier and well layer are used.Since the device adopts the structure of the coplanar electrode

the working current of the laser does not need to pass through the substrate

resulting the reduction of the operating capacitance of laser.The capacitance is reduced when compared with the conventional one and the photoelectric characteristic of the laser is improved.We also fabricate a sample of a strained MQW laser.The Photoluminescence（PL）spectra are obtained by fluorescence analysis.The lasing wavelength is 1 304 nm.The threshold current is Ith ≤9 mA.The slope efficiency of one side is 0.44 W/A.Test results indicate the device has good performance parameters

which has the characteristics of high linearity and high power.