A 1 550 nm-band Indium Nitride（InN）Distributed Feedback（DFB）semiconductor laser based on the Reconstruction Equivalent Chirp（REC）technology is proposed.Based on the theory of Transfer Matrix Method（TMM）

the optical properties of the structured laser are simulated and analyzed.The results show that the laser designed on the basis of this technology has good optoelectronic characteristics and has a very small threshold current at about 6.1 mA with slope efficiency of0.31 mW/mA.The single-mode lasing at 1 549.09 nm is obtained at an injection current of 20 mA

and the side mode suppression ratio exceeds 39 dB.The effects of laser cavity length and active layer thickness are also analyzed.The longer the cavity length indicates lower power and stronger hole burning effect.The larger active layer thickness indicates higher the threshold current.This result provides some reference value for the design and processing of indium nitride DFB laser.