The influence of the doping parameters on the detection wavelength of the GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector（QWIP）is studied based on the theoretical model.In addition

the 2×2 Hamiltonian method is used to calculate the characteristic energy states in this model

which lays a solid foundation for the establishment of the model.By comparing the simulated data with the existing experimental data

it is found that with the increase of doping concentration

the peak normalized absorption rate

absorption coefficient and responsivity width are nonlinearly increased.Finally

it is found that with the increasing of the mole fraction（x）of Al in the AlxGa1-xAs barrier and the inter-subband absorption

the absorbed peak wavelength shifts toward a shorter wavelength.Therefore

it’s significant to select the appropriate doping concentration for the design of high-performance QWIP.