基于绝缘体上硅纳米线的布拉格相移光栅

秦志斌; 姚飞; 肖经; 韦启钦

doi:10.13756/j.gtxyj.2024.230120

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基于绝缘体上硅纳米线的布拉格相移光栅

光电器件研究与应用 | 更新时间：2024-12-05

- 基于绝缘体上硅纳米线的布拉格相移光栅
- Phase-Shifted Bragg Grating based on Silicon-on-Insulator Nanowire
- 光通信研究 2024年第6期页码：23012001-23012004
- 作者机构：
  
  1.桂林聚联科技有限公司，广西　桂林　541004
  2.桂林电子科技大学　机电工程学院，广西　桂林　541004
- 作者简介：
  
  秦志斌（1974-），男，广西桂林人。高级工程师，硕士，主要研究方向为光通信、光传感及相关光器件开发和应用。
  肖经，教授。E-mail：xiaojing@guet.edu.cn
- 基金信息：
  
  国家自然科学基金资助项目(62164004);广西区科技创新驱动专项资助项目(桂科计字〔2022〕68号)
- DOI：10.13756/j.gtxyj.2024.230120
  中图分类号： TN256
- 纸质出版日期：2024-12-10，
  
  收稿日期：2023-09-28，
  
  修回日期：2023-10-29，
- 稿件说明：
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秦志斌，姚飞，肖经，等. 基于绝缘体上硅纳米线的布拉格相移光栅[J]. 光通信研究，2024(6):230120.

Qin Z B, Yao F, Xiao J, et al. Phase Shifted Bragg Grating based on Silicon on Insulator Nanowire [J]. Study on Optical Communications, 2024(6):230120.
秦志斌，姚飞，肖经，等. 基于绝缘体上硅纳米线的布拉格相移光栅[J]. 光通信研究，2024(6):230120. DOI： 10.13756/j.gtxyj.2024.230120.

Qin Z B, Yao F, Xiao J, et al. Phase Shifted Bragg Grating based on Silicon on Insulator Nanowire [J]. Study on Optical Communications, 2024(6):230120. DOI： 10.13756/j.gtxyj.2024.230120.

摘要

基于金属互连的电子集成芯片串扰、延迟、散热以及功耗等问题日益凸显，已经难以满足日益增长的数据处理需求。光电集成技术作为下一代互连技术，随着其不断发展，业界对光电器件尺寸和性能的要求越来越高。

【目的】

为了能够兼顾布拉格相移光栅的器件大小和损耗，实现结构紧凑的相移光栅器件，文章提出了一种基于绝缘体上硅（SOI）纳米线的布拉格相移光栅。

【方法】

文章所提布拉格相移光栅是通过光刻技术在硅纳米线上制作周期性凹槽，构造光栅结构，从而降低光信号的传输损耗。为了验证文章所提布拉格相移光栅的性能，在入射波长范围为1 400～1 600 nm条件下，采用有限元法和时域有限元法对该器件的传输模式与传输特性进行了分析研究。此外，为了能够获得最佳的布拉格相移光栅结构参数，引入

因子作为布拉格相移光栅结构优化设计的目标参数。

【结果】

研究结果表明，文章所提布拉格相移光栅在波长范围为1 400～1 600 nm条件下，具有优异的波长选择性能，并且几乎没有传输损耗；

因子最大值为159时，该布拉格相移光栅性能最佳，光栅周期

为60。

【结论】

文章所提基于SOI纳米线布拉格相移光栅能够兼容传统半导体制备工艺，与基于表面等离激元布拉格相移光栅相比，在制造成本和光信号传输损耗方面具有较大的优势，能够广泛应用于密集波分复用、生物传感和滤波等领域。

Abstract

Electronic integrated chips based on metal interconnections face increasing challenges

including crosstalk

delay

heat dissipation

and power consumption

making it difficult to meet the growing demand for data processing. Optoelectronic integration is considered to be the next generation interconnect technology. As this technology continuous to evolve

the industry's requirements for the size and performance of optoelectronic devices are becoming increasingly demanding.

【Objective】

To address the device size and loss of the Bragg phase shift grating

this paper proposes a Bragg phase shift grating based on Silicon-on-Insulator (SOI) nanowires.

【Methods】

By leveraging photolithography technology

periodic grooves are created on silicon nanowires to construct the grating structure

effectively reducing the transmission loss of optical signals. In order to verify the performance of the Bragg phase-shifted grating

the transmission modes and characteristics of the device are analyzed and studied using the finite element method and the finite-difference time-domain method under conditions with an incident wavelength range of 1 400 to 1 600 nm. Additionally

to obtain the best structural parameters of the Bragg phase-shift grating

the

factor is introduced as the optimization target parameter.

【Results】

The results show that the Bragg phase shift grating has excellent wavelength selection performance in the wavelength range of 1 400～1 600 nm

and has a ultra-low transmission loss. Notably

when the maximum

factor is 159

the Bragg phase shift grating achieves the best performance

with the grating period

of 60.

【Conclusion】

This grating offers significant advantages over surface plasmon-based Bragg phase shift gratings in terms of manufacturing cost and transmission loss of optical signal. As a result

it has wide applications in dense wavelength division multiplexing

biological sensing

filtering

and other related fields.

关键词

相移光栅波长选择布拉格光栅绝缘体上硅

Keywords

phase-shifted gratingwavelength selectiveBragg gratingSOI

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