摘要:This paper briefly des■ribes the worldwide trends of optical fiber communications research, emphasizing on the impor■ant applied research work and the obvious shift of the research topics. After enumerating an outline of general trends, it describes the technological progress in optical fiber, optoelectronic devices, coherent systems, m u 1ticarrier systems, public digi■al ne■work, and private local area network. ■ poin■s out the importance of OEIC, OFDM, sonet and FDD■. ■ will serve as referen■e for the research workers in this field.
摘要:This paper, according to the new CCITT re■ommendations in blue book of 1988 and the documents of IEC, and the experiences of some optical cable projects recently built in China, discusses several important principles that may be considered for general design.
摘要:This article analyzes clock recovery and decision circuit used in digital communication systems on optical fiber cables.The resort to select and design these circuit is given. The example of the practical circuit used in optical line terminal unit and repeater at 34 Mb/s is also given.
摘要:Based on the formula S=10lg (6VN/RoRf), the effect of various factors on the sensitivity of 34Mb/s PIN FET optical receiver is analysed quantitatively in this paper.
摘要:This paper in■roduces spectral characteristics of InGaAsP/InP DC-PBH-LD and DFB-LD operating at different bit rates and optical output waveforms. The possibility of adopting Fabry-pe rot se■iconducto■ lasers as the light sou■ce for highe■ speed digital communications is also app■oched.
摘要:This paper describes the quality test types and necessary test items for optical fiber and cable products as well as the principal technical specifications and test methods. Our purpose is to give a reference to the users for the acceptance check of the ordered optical fibers and cables
摘要:A directing technique is described to define the refractive index ellipse of the end face for SPSM fiber, particularly, for Bow-Tie fiber, by etching method. It includes the importance and the possibility of directing end face,optical path of illumination for directing as well as marking method.
摘要:In this paper, we plot the space of device structure parameters, in which InGaAs/InGaAsP/InP avalanche photodiodes with seperated absorption, grading and multiplication region is estimated and choosed according to the requirement of the avalanche field and the field limitting tunnelling current in this device. Two kinks like a step of Ip-V curve are measured and explained. The expcrential formula which is in agreement with pratical measurement result of Mp is griven and discussed.