基于电感峰化技术的跨阻放大器研究

李谦; 赵中梁; 庞俊奇; 张磊; 谭秋林

doi:10.13756/j.gtxyj.2025.240088

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基于电感峰化技术的跨阻放大器研究

光电器件研究与应用 | 更新时间：2025-06-18

- 基于电感峰化技术的跨阻放大器研究
- Research on Transimpedance Amplifier based on Inductive Peaking Technology
- 光通信研究 2025年第3期
- 作者机构：
  
  1.中北大学　微纳器件与系统教育部重点实验室，太原　 030051
  2.中核山东核能有限公司，山东　烟台　 264003
- 作者简介：
  
  李谦（1999-），女，山西临汾人。硕士，主要研究方向为无线光通信研发和电路与系统。
  谭秋林，教授。E-mail：tanqiulin@nuc.edu.cn
- 基金信息：
  
  国家自然科学基金青年资助项目(52105594);国家自然科学基金创新研究团队资助项目(51821003);山西省重点研发计划资助项目(202102030201005);山西省应用基础研究计划青年资助项目(20210302124274)
- DOI：10.13756/j.gtxyj.2025.240088
  中图分类号： TN722
- 收稿日期：2024-04-30，
  
  修回日期：2024-05-13，
  
  纸质出版日期：2025-06-10
- 稿件说明：
移动端阅览
李谦，赵中梁，庞俊奇，等. 基于电感峰化技术的跨阻放大器研究[J]. 光通信研究，2025(3): 240088.

Li Q, Zhao Z L, Pang J Q, et al. Research on Transimpedance Amplifier based on Inductive Peaking Technology[J]. Study on Optical Communications, 2025(3): 240088.
李谦，赵中梁，庞俊奇，等. 基于电感峰化技术的跨阻放大器研究[J]. 光通信研究，2025(3): 240088. DOI： 10.13756/j.gtxyj.2025.240088.

Li Q, Zhao Z L, Pang J Q, et al. Research on Transimpedance Amplifier based on Inductive Peaking Technology[J]. Study on Optical Communications, 2025(3): 240088. DOI： 10.13756/j.gtxyj.2025.240088.

摘要

【目的】

随着光通信技术传输速率的快速增长，低功耗、小型化和宽带宽的光放大器成为影响高速光通信的关键因素。文章基于低成本的130 nm互补金属氧化物半导体（CMOS）工艺技术，设计了一种应用于光通信系统中的宽带宽跨阻放大器（TIA），可实现10 Gbit/s的高速数据传输。

【方法】

光电探测器的寄生电容会在系统传递函数中引入一个主极点，从而对带宽和噪声性能产生不良影响。为突破这一限制，文章结合电感峰化技术设计了一种基于有源反馈结构的光放大电路。电路供电电压为1.3 V，通过改进传统共源共栅结构作为输入级，以隔离输入寄生电容对带宽的影响，并建立小信号等效模型对电路的传递函数进行分析。该结构降低了输入阻抗，利用有源反馈和电感峰化技术扩展了带宽。放大电路由带隙基准（BGR）提供精确、稳定且不受温度影响的偏置电压，保证晶体管的最佳工作点以提升系统的稳定性。为了验证该结构的可靠性，使用Cadence软件中的Spectre工具对电路进行设计仿真。

【结果】

仿真结果显示，当输入寄生电容取经典值0.25 pF时，该结构的-3 dB带宽达到了9.23 GHz，功耗仅为23.5 mW，等效输入电流噪声低于

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，传输速率为10 Gbit/s的信号眼图抖动较小，垂直张开度表现良好。

【结论】

结果表明TIA的信号传输效果优良，该设计能够满足10 Gbit/s传输速率的光接收机设计要求，在高速光通信集成电路领域具有重大参考价值。

Abstract

【Objective】

With the rapid growth of transmission rates in optical communication technology

low-power

miniaturized

and wide bandwidth optical amplifiers are key factors affecting high-speed optical communication. In this paper

a wide bandwidth Transimpedance Amplifier (TIA) applied in optical communication system is designed based on a low-cost 130 nm Complementary Metal Oxide Semiconductor (CMOS) process technology

which can achieve high-speed data transmission at 10 Gbit/s.

【Methods】

The parasitic capacitance of a photodetector can produce a principal pole in the system transfer function

which can adversely affect the bandwidth and noise performance. In order to break this limitation

this paper designs an optical amplification circuit based on active feedback structure in combination with inductive peaking technique. The circuit is supplied with a voltage of 1.3 V. A conventional common source and gate structure is improved as the input stage to isolate the effect of input parasitic capacitance on bandwidth

and a small signal equivalent model is developed to analyze the transfer function of the circuit. The structure reduces the input impedance and further extends the bandwidth using active feedback and inductive peaking techniques. The amplifier circuit is supplied with precise

stable and temperature-independent bias voltage by the Bandgap Reference (BGR)

which ensures the optimal operating point of the transistor to enhance the stability of the system. To verify the reliability of the structure

the circuit is designed and simulated using the Spectre tool of Cadence software.

【Results】

The simulation results show that when the input parasitic capacitance

takes the classical value of 0.25 pF

the -3 dB bandwidth of the structure can reach 9.23 GHz

and the power consumption is only 23.5 mW. Moreover

the equivalent input current noise is lower than

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and the eye diagram of the signals with a transmission rate of 10 Gbit/s has less jitter with good vertical eye-opening performance.

【Conclusion】

The results indicate that the signal transmission effect of TIA is good

and the design can meet the design requirements of optical receiver with 10 Gbit/s transmission rate

which is of great reference value in the field of high-speed optical communication integrated circuits.

关键词

Keywords

references

Gu Z , Wang S , Lu C , et al . Design of Wide-band High-linearity Transimpedance Amplifier Using Standard CMOS Technology [J ] . Journal of Electrical Engineering , 2023 , 74 ( 5 ): 413 - 421 .

林少衡 . 一种64 GBaud双通道差分线性跨阻放大器 [J ] . 光通信研究 , 2023 ( 6 ): 57 - 63 .

Lin S H . A 64 GBaud Dual Channel Differential Linear Trans-impedance Amplifier [J ] . Study on Optical Communications , 2023 ( 6 ): 57 - 63 .

赵婉青 , 夏翼飞 , 李佳 , 等 . 用于PON的低成本CMOS BM-TIA设计 [J ] . 光通信研究 , 2025 ( 1 ): 230163 .

Zhao W Q , Xia Y F , Li J , et al . Low-cost CMOS BM-TIA Design for PON [J ] . Study on Optical Communications , 2025 ( 1 ): 230163 .

Hasan S M R . Design of a Low-power 3.5-GHz Broad-band CMOS Transimpedance Amplifier for Optical Transceivers [J ] . IEEE Transactions on Circuits and Systems I: Regular Papers , 2005 , 52 ( 6 ): 1061 - 1072 .

Park S M , Yoo H J . 1.25-Gb/s Regulated Cascode CMOS Transimpedance Amplifier for Gigabit Ethernet Applications [J ] . IEEE Journal of Solid-State Circuits , 2004 , 39 ( 1 ): 112 - 121 .

Raut R , Gibson G . A Technique to Determine the Designable Inductance Value(s) in Wide-band CMOS-amplifier System Employing Shunt-Peaking [J ] . Journal of Circuits, Systems and Computers , 2015 , 24 ( 8 ): 1550119 .

陶希子 . RGC结构光接收机模拟前端电路的优化设计 [D ] . 天津 : 天津大学 , 2016 .

Tao X Z . Optimization and Design of Optical Receiver Analog Front End Circuit of RGC Configuration [D ] . Tianjin, China : Tianjin University , 2016 .

闵闯 . 基于40 nm CMOS工艺的25 Gb/s光接收机模拟前端电路研究 [D ] . 天津 : 天津大学 , 2019 .

Min C . Research on Analog Front-end Circuit for 25 Gb/s Optical Receiver in 40 nm CMOS [D ] . Tianjin, China : Tianjin University , 2019 .

孙路 , 赵振宇 , 尹湘江 . 密勒运算跨导放大器的单粒子瞬变效应分析 [J ] . 微电子学 , 2012 , 42 ( 4 ): 449 - 453 .

Sun L , Zhao Z Y , Yin X J . Analysis of Single-event Transients in Miller Operational Transconductance Amplifier [J ] . Microelectronics , 2012 , 42 ( 4 ): 449 - 453 .

黄未霖 , 蔡孟冶 , 姜岩峰 . 一种宽带CMOS低噪声放大器 [J ] . 半导体技术 , 2023 , 48 ( 6 ): 493 - 499 .

Huang W L , Cai M Y , Jiang Y F . A Wideband CMOS Low Noise Amplifier [J ] . Semiconductor Technology , 2023 , 48 ( 6 ): 493 - 499 .

Momeni O , Hashemi H , Afshari E . A 10-Gb/s Inductorless Transimpedance Amplifier [J ] . IEEE Transactions on Circuits and Systems II: Express Briefs , 2010 , 57 ( 12 ): 926 - 930 .

Seifouri M , Amiri P , Dadras I . A Transimpedance Amplifier for Optical Communication Network based on Active Voltage-current Feedback [J ] . Microelectronics Journal , 2017 , 67 : 25 - 31 .

Kim S H , Kam C U , Lee J H . Design of 2.5 Gb/s Transimpedance Amplifier Using CMOS Technologies [C ] // The 9th International Conference on Advanced Communication Technology . Gangwon, Korea : IEEE , 2007 : 1825 - 1828 .

Chen H L , Chen C H , Yang W B , et al . Inductorless CMOS Receiver Front - End Circuits for 10-Gb/s Optical Communications [J ] . Journal of Applied Science and Engineering , 2009 , 12 ( 4 ): 449 - 458 .

Chen R Y , Yang Z Y . CMOS Transimpedance Amplifier for Gigabit-per-second Optical Wireless Communications [J ] . IEEE Transactions on Circuits and Systems II: Express Briefs , 2016 , 63 ( 5 ): 418 - 422 .

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