Discussion on the Development of Integrated Circuits and Photonics-electronics Convergence

ZHANG Xinquan; XIAO Xi

doi:10.13756/j.gtxyj.2025.240056

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Discussion on the Development of Integrated Circuits and Photonics-electronics Convergence

更新时间：2025-05-08

- Discussion on the Development of Integrated Circuits and Photonics-electronics Convergence
- Study on Optical Communications Issue 2, (2025)
- 作者机构：
  
  1.光通信技术和网络全国重点实验室，武汉　 430074
  2.中国信息通信科技集团有限公司，武汉　 430074
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.2025.240056
  CLC： TN29
- Received：05 March 2024，
  
  Revised：2024-03-25，
  
  Published：10 April 2025
- 稿件说明：
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张新全，肖希. 集成电路发展与光电融合探讨[J].光通信研究，2025(2)：240056.

Zhang X Q, Xiao X. Discussion on the Development of Integrated Circuits and Photonics-electronics Convergence[J]. Study on Optical Communications, 2025(2): 240056.
张新全，肖希. 集成电路发展与光电融合探讨[J].光通信研究，2025(2)：240056. DOI： 10.13756/j.gtxyj.2025.240056.

Zhang X Q, Xiao X. Discussion on the Development of Integrated Circuits and Photonics-electronics Convergence[J]. Study on Optical Communications, 2025(2): 240056. DOI： 10.13756/j.gtxyj.2025.240056.

摘要

经过60余年指数级高速发展，集成电路最先进制程工艺节点已来到1 nm。近10年来集成电路的发展在转向，从平面等比例微缩转为三维等效微缩，从性能驱动转为功耗驱动，从单元集成转为系统集成，业界普遍认为已进入到“后摩尔时代”。当前，集成电路面临着3大技术难题，尺寸缩减举步维艰，不仅制程升级放缓，而且代价超百亿美金，格罗方德等部分晶圆厂已放弃进军更先进制程，仅台积电（TSMC）、三星、Intel和Imec等极少数晶圆厂在继续向前推进“深度摩尔”。文章从集成度和能耗两个维度分析了可供深度摩尔继续利用的理论空间，并简要介绍了国际器件与系统路线图（IRDS）关于未来15年的技术演进路线图。“超越CMOS”致力于通过原理、材料和结构等创新找到显著优于传统互补金属氧化物半导体（CMOS）的可能器件和方法，这方面的探索尚属于学术前沿研究阶段。产业界对于系统级封装（SiP）、异质集成和芯粒（Chiplet）等“扩展摩尔（MtM）”技术更为关注。由于信息硬件技术当前遇到的困难和限制是源自电子的物理特性，光子作为与其物理秉性相异的信息载子被寄予厚望，正从传统的传输技术泛化为信息通信技术（ICT）的全尺度连接手段，并逐步进入计算、处理和路由等复杂功能域，光电融合逐渐成为信息技术的重要发展方向。光电融合主要体现于两个维度，一是功能维度协同化，二是硬件维度一体化。文章对这两个维度的进展进行了介绍，并指出以硅为基础的多材料异质集成和混合集成是当前芯片层面光电融合的着眼点，使得光电子发展呈现出“微电子化”的显著特征。光电融合刚起步，在其探索过程中，文章作者认为：一是要重视系统架构层面的适应性改变，不能仅停留于芯片层面；二是融合尚需新材料、新型器件、新工艺、新设备和新系统等多方面创新；三是不能把光电融合狭隘地局限于当前业界着力的MtM方向，还应看到其在Beyond CMOS方向的诸多可能性。

Abstract

After more than 60 years of exponential rapid development

the most advanced process node of integrated circuits has come to 1 nm. In the past decade

the development of integrated circuits has shifted

from planar proportional scaling to three-dimensional equivalent scaling

from performance-driven to power-consumption-driven

from unit integration to system integration

and the industry generally believes that it has entered the post-Moore era. At present

integrated circuits are facing three major technical challenges

which results in great difficulties in reducing size. Not only is process upgrading slowing down

but the cost exceeds 10 billion dollars. Some wafer fabs such as GLOBALFOUNDRIES have given up advancing to more advanced processes

while only a few such as Taiwan Semiconductor Manufacturing Company (TSMC)

Samsung

Intel

and Imec continue to advance towards More Moore. This article studies the theoretical space for further utilization from the dimensions of integration and energy consumption

and briefly introduces the technology evolution roadmap of International Roadmap for Devices and Systems (IRDS) for the next 15 years. Beyond Complementary Metal Oxide Semiconductor (CMOS) is committed to finding potential devices and methods that are significantly superior to traditional CMOS through innovation in principles

materials

structures

etc.

and this exploration is still in the forefront of academic research. The industry is paying more attention to More than Moore (MtM) technologies such as System-in-Package (SiP)

heterogeneous integration

and chiplets. Due to the current difficulties and limitations faced by information hardware technology stemming from the physical properties of electrons

photons are highly anticipated because of its difference from electrons. Now photonics is being generalized from traditional transmission technology to Information Communications Technology (ICT) full-scale connection technology

and gradually entering complex functional domains such as computing

processing

and routing. Photonics-electronics convergence has gradually become an important development direction of information technology. Photonics-electronics convergence is mainly reflected in two dimensions

functional dimension synergy and hardware dimension integration. This article introduces the progress of these two dimensions

and points out that silicon-based heterogeneous integration and hybrid integration are the current focus of the chip-level photonics-electronics convergence

which makes the development of optoelectronics exhibit the remarkable characteristics of "microelectronization". Photonics-electronics convergence is just beginning

and in its exploration process. The article concludes three points. At first

the attention to adaptive changes should be paid at the system architecture level

not just stay at the chip level. Secondly

the convergence still requires innovation in various aspects such as new materials

new devices

new processes

new equipment

and new systems. Thirdly

photonics-electronics convergence cannot be narrowly limited to the current focus on MtM direction

but also should recognize its many possibilities in the direction of Beyond CMOS.

关键词

Keywords

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Related Author

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Related Institution

a School of Integrated Circuits; b Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology

Peng Cheng Laboratory

State Key Laboratory of Optical Communication Technologies and Networks

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