Inverse-Designed Silicon Nitride Optical Power Splitter

LIU Zhiqiang; SHI Yuanlin; ZHANG Jianhua; GUO Jingzhong

doi:10.13756/j.gtxyj.2025.250258

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Inverse-Designed Silicon Nitride Optical Power Splitter

更新时间：2025-10-15

- Inverse-Designed Silicon Nitride Optical Power Splitter
- Study on Optical Communications Issue 5, (2025)
- 作者机构：
  
  中国空间技术研究院西安分院，西安　710000
- 作者简介：
- 基金信息：
- DOI：10.13756/j.gtxyj.2025.250258
  CLC： TN256
- Received：19 July 2025，
  
  Revised：2025-08-25，
  
  Published：10 October 2025
- 稿件说明：
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刘志强，石沅林，张建华，等. 基于逆向设计的氮化硅光功率分配器[J]. 光通信研究，2025(5): 250258.

Liu Z Q, Shi Y L, Zhang J H, et al. Inverse-Designed Silicon Nitride Optical Power Splitter[J]. Study on Optical Communications, 2025(5): 250258.
刘志强，石沅林，张建华，等. 基于逆向设计的氮化硅光功率分配器[J]. 光通信研究，2025(5): 250258. DOI： 10.13756/j.gtxyj.2025.250258.

Liu Z Q, Shi Y L, Zhang J H, et al. Inverse-Designed Silicon Nitride Optical Power Splitter[J]. Study on Optical Communications, 2025(5): 250258. DOI： 10.13756/j.gtxyj.2025.250258.

摘要

【目的】

针对传统光功率分配器设计灵活度低和尺寸大的问题，文章提出了一种基于逆向设计的氮化硅（Si

）光功率分配器。

【方法】

文章所提光功率分配器采用二维（2D）与三维（3D）拓扑优化（TO）的协同设计，在8 μm×8 μm设计区域内实现了光的均匀分配。

【结果】

通过2D TO，该器件在1 450~1 650 nm波长范围内的插入损耗（IL）仅为0.050~0.089 dB。以此为基础，将2D优化得到的部分二值化数据导入作为初始结构进行3D TO，充分考量垂直方向上的光场约束与泄漏等问题，在相同波段内的IL为0.133~0.168 dB，相比2D TO时略有增加，但与预期相符，展现出了器件优异的宽带低损耗特性。仿真结果显示，设计区域长度和宽度在±100 nm的范围内变化时，对光功率分配器的性能基本没有影响，表明该光功率分配器具备较大的制造容差，具有较高的鲁棒性。

【结论】

文章所提工作显著提升了光功率分配器的性能、集成度与可制造性，为高密度光子集成电路提供了关键器件支撑。

Abstract

【Objective】

To address the limitations of low design flexibility and large size in traditional optical power splitters

this paper proposes an inversely designed silicon nitride (Si

) optical power splitter.

【Methods】

The proposed power splitter employs a co-design strategy integrating Two Dimensional (2D) and Three Dimensional (3D) Topology Optimization (TO). This approach achieves uniform optical power distribution within a compact 8 μm×8 μm design region.

【Results】

Through 2D TO

the device exhibits remarkably low Insertion Losses (IL) ranging from 0.050~0.089 dB across the wavelength of 1 450~165 0 nm. Then partially binarized data from the 2D optimization was imported as the initial structure for 3D TO. This 3D stage rigorously accounted for vertical optical field confinement and leakage effects. The resulting device demonstrated IL of 0.133~0.168 dB within the same wavelength band. While slightly higher than the 2D results

this result aligns with the expectations and confirms the good broadband low-loss characteristics. Furthermore

the simulation results indicate that varying the designed length and width within±100 nm has virtually no impact on the performance of the optical power splitter. This demonstrates significant fabrication tolerance and high robustness.

【Conclusion】

The proposed design significantly enhances the performance

integration density

and manufacturability of optical power splitters

which provides a critical device foundation for high-density photonic integrated circuits.

关键词

Keywords

references

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Related Institution

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